Researchers from the Max Planck Institute for the Science of Light and the Fraunhofer Institute for Integrated Systems and Device Technology IISB are advancing silicon carbide as a key material ...

Research led by Oleg Mitrofanov, professor of Terahertz Photonics in University College London (UCL) has demonstrated a new approach for aligning the emission wavelengths of individual GaAs quantum ...

Phlux Technology, a UK manufacturer of avalanche photodiode (APD) IR sensors, has landed the prestigious SPIE Prism Award for ...

A new report 'GaAs RF Semiconductor Market Report 2026' has been announced by ResearchAndMarkets, showing robust growth that ...

In a study published in Nano Letters, researchers at the US Argonne National Lab demonstrated a quadratic increase in ...

Taiwanese foundry Vanguard International Semiconductor (VIS) has signed a technology licensing agreement with TSMC for high-voltage (650V) and low-voltage (80V) GaN technologies.

Vishay has introduced five new 1200 V MOSFET power modules designed to increase power efficiency for medium to high frequency applications in automotive, energy, industrial, and telecom systems.

Researchers at Stanford University and TSMC have shown that adding an ultra-thin Al 2 O 3 interlayer improves reliability and ...

Japanese firm Nuvoton Technology has started mass production of its high-power UV semiconductor laser (379 nm, 1.0 W), which ...

NEC has announced the development of a high-efficiency, compact 10mm x 6mm GaN-based Power Amplifier Module (PAM) for the sub-6GHz band, designed for integration into 5G base station Radio Units (RUs) ...

A new white paper published by Compound Semiconductor Applications (CSA) Catapult sets out how the UK could take a leading ...