IEEE

Characterization of Drain-Induced Barrier Lowering in GaN HEMTs Using a Drain Current Injection Technique

Abstract: Assessing short channel effects (SCEs) is crucial in the high-frequency optimization of downscaled field-effect transistors (FETs) such as GaN high electron mobility transistors (HEMTs).
IEEE

Enhanced Gate Reliability of p-GaN/AlGaN/GaN HEMTs Due to Gate Hole Injection and Recombination

Abstract: This letter substantially improves the understanding on the degradation of normally-OFF GaN HEMTs with p-GaN gate subject to forward gate stress, and demonstrates that a significant ...
Digi Times

Intel unveils ultra-thin GaN chiplet as it advances AI-era systems foundry strategy

Intel Foundry has announced a breakthrough in gallium nitride (GaN) chiplet technology, unveiling what it describes as the world's thinnest GaN chiplet as part of its broader push to position itself ...