IEEE

Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives

Abstract: We present a comprehensive review and outlook of silicon carbide (SiC) and gallium nitride (GaN) transistors available on the market for current and next-generation power electronics.
IEEE

p-GaN Gate HEMT With Surface Reinforcement for Enhanced Gate Reliability

Abstract: By deploying a surface reinforcement layer (SRL) at the interface between Schottky metal and p-GaN in the gate stack, a p-GaN gate high-electron-mobility transistor (HEMT) with enhanced gate ...
powerelectronicsnews

Intel Foundry Unveils Ultra-Thin GaN Chiplet Technology

Ultra-thin GaN chiplet integrates power and logic, enabling efficient, high-density designs for AI, data centers, and wireless systems. Intel Foundry has demonstrated an ultra-thin gallium nitride ...
Digi Times

Intel unveils ultra-thin GaN chiplet as it advances AI-era systems foundry strategy

Intel Foundry has announced a breakthrough in gallium nitride (GaN) chiplet technology, unveiling what it describes as the world's thinnest GaN chiplet as part of its broader push to position itself ...