Semiconductor Engineering

GaN Power Devices: Stability, Reliability and Robustness Issues

A technical paper titled “Stability, Reliability, and Robustness of GaN Power Devices: A Review” was published by researchers at Virginia Polytechnic Institute and State University, Johns Hopkins ...
IEEE

Characterization of Drain-Induced Barrier Lowering in GaN HEMTs Using a Drain Current Injection Technique

Abstract: Assessing short channel effects (SCEs) is crucial in the high-frequency optimization of downscaled field-effect transistors (FETs) such as GaN high electron mobility transistors (HEMTs).
IEEE

A Neural Network-based Manufacturing Variability Modeling of GaN HEMTs

Abstract: A new technique to accurately model the manufacturing variability of GaN HEMT using a neural network(NN) is presented in this paper. Compact model parameters are automatically generated ...
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