Compound Semiconductor

Si-doped AlN films for Schottky applications

Atomic Force Microscopy (AFM) showed that stepped terrace structures dominated at low doping levels, while increasing silicon ...
EDN

GaN transistors integrate Schottky diode

Medium-voltage CoolGaN G5 transistors from Infineon include a built-in Schottky diode to minimize dead-time losses and enhance system efficiency. The integrated diode also streamlines power stage ...
Electronic Design

Infineon Introduces First GaN Power FET to Integrate Schottky Diode

Gallium nitride (GaN) is fast becoming a foundational technology in power electronics, offering higher power density and better efficiency than traditional silicon. By bringing faster switching speeds ...
Nasdaq

Vishay Intertechnology Introduces New Gen 3 650 V and 1200 V Silicon Carbide Schottky Diodes in SlimSMA HV Package

Vishay Intertechnology, Inc. has announced the launch of three new Gen 3 650 V and 1200 V silicon carbide Schottky diodes, specifically the VS-3C01EJ12-M3, VS-3C02EJ07-M3, and VS-3C02EJ12-M3, which ...
Hosted on MSN

Vishay Unveils Next-Gen SiC Schottky Diodes for High-Efficiency Power Designs

MALVERN, PA — Vishay Intertechnology, Inc. (NYSE: VSH) has introduced a new series of advanced silicon carbide (SiC) Schottky diodes aimed at boosting efficiency in high-speed, hard-switching power ...
Nasdaq

Vishay Intertechnology 650 V and 1200 V SiC Schottky Diodes in SOT-227 Package Increase Efficiency in High Frequency Applications

40 A to 240 A Dual-Diode and Single Phase Bridge Devices Offer Low Forward Voltage Drop Down to 1.36 V and QC Down to 56 nC MALVERN, Pa., Jan. 29, 2025 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc.