In 1987 Fujio Masuoka, then working at Toshiba, introduced NAND flash at the 1987 IEEE International Electron Devices Meeting (IEDM) in San Francisco. Toshiba said that the name “flash” was suggested ...
JEDEC is a global leader in developing standards for the microelectronics industry. JESD230 is JEDEC’s NAND Flash Interface ...
ITRI is phasing out research of Phase-change memory but believes Resistive-RAM shows enough promise that it could be ready for the embedded chip market within the next few years A Taiwanese research ...
The part 1 of this two-article series outlined the NAND flash technology and how it transitioned from 2D to 3D NAND flash. The article also explained the current challenges in the way of density ...
An artist’s representation of a hole etched into alternating layers of silicon oxide and silicon nitride using plasma, to make 3D NAND flash memory. Researchers want to refine how they make these ...
SK Hynix announced that production of its milestone flash memory is underway. The memory maker said that it had passed 300 layers earlier this year. For proof, it unveiled a 321-layer, 1Tb TLC 4D ...
A technical paper titled “3D NAND Flash Memory Cell Current and Interference Characteristics Improvement With Multiple Dielectric Spacer” was published by researchers at Myongji University, Soongsil ...
Although the FMS is broadening to include all solid-state storage, not just flash memory, there were several product and technology announcements at the 2022 Flash Memory Summit. Let’s look at ...
Chinese NAND flash memory maker Yangtze Memory is reportedly strengthening ties with domestic equipment providers to supplant US-made equipment parts and components in its manufacturing equipment, and ...
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