Using the latest generation of trench and polar power MOSFET technologies, both trench and polar P-channel power MOSFETs have been developed that retain all the features of comparable N-channel power ...

A research team has developed an n-channel diamond MOSFET (metal-oxide-semiconductor field-effect transistor). The developed n-channel diamond MOSFET provides a key step toward CMOS (complementary ...

The automotive sector is seeing a surge in the number of electronic components required, driven by demand for enhanced safety and convenience. At the same time, there’s a pressing need for improved ...

KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched “TPH3R10AQM,” a 100V N-channel power MOSFET fabricated with Toshiba’s latest-generation ...

The P-channel power MOSFET of IXYS retail all features of the comparable N-channel power MOSFET such as very fast switching, voltage control, ease of paralleling and excellent temperature stability.

Diodes Incorporated (Diodes) (Nasdaq: DIOD) expands its PowerDI8080-5 automotive-compliant* N-channel MOSFET portfolio with the introduction of an industry-leading, ultra-low RDS(ON), 100V MOSFET.

TOKYO--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has released “XK1R9F10QB,” a 100V N-channel power MOSFET suitable for automotive 48V equipment applications such as ...

Analog Devices, which recently acquired Linear Technology, has launched the LTC7003, a high speed, high side N-channel MOSFET driver that operates up to a 60V supply voltage. Its internal charge pump ...

New Yorker Electronics is aiming at displacing PowerPAK 1212 packaged mosfets by stocking a pair of symmetric 80V n-channel mosfets in a single 3.3 x 3.3mm package from Vishay. Called SiZF4800LDT, the ...

Analog Devices, Inc., which recently acquired Linear Technology Corporation, announces the LTC7004, a high speed, high side N-channel MOSFET driver that operates up to a 60V supply voltage. Its ...

The source voltage of a P-channel device is stationary when the device operates as an HS switch. Conversely, the source voltage of an N-channel device used as an HS switch varies between the low side ...

(Left) Atomic force microscope image of diamond epilayer surface morphology. (Middle) Optical microscope image of the diamond MOSFET. (Right) Performance of the MOSFET measured at 300°C. The drain ...